V–I characteristic of a silicon diodeसिलिकॉन डायोड का V–I अभिलक्षणV–I characteristic of a silicon diode

NCERT Fig 14.16 (c) · Class 12 Physics · Chapter 14 · interactive diagram

Parts and what they mean

• Forward characteristic (अग्र अभिलक्षण) — Current stays almost zero until the threshold voltage, then rises steeply (exponentially) — milliamperes.
• Threshold (cut-in) voltage (देहली (कट-इन) वोल्टता) — About 0.7 V for silicon and 0.2 V for germanium diodes.
• Reverse saturation current (उत्क्रम संतृप्त धारा) — Very small (µA) and nearly independent of the reverse voltage: limited by the number of minority carriers, not by the voltage.
• Breakdown voltage Vbr (भंजन वोल्टता Vbr) — At V = Vbr the reverse current rises sharply. If it is not limited below the rated value, the diode is destroyed by overheating. General-purpose diodes are not used beyond the reverse saturation region. (The value −80 V here is only illustrative.)
• Axes and scales (अक्ष और पैमाने) — Forward: volts (0–1 V) and mA. Reverse: tens of volts and µA. The two quadrants have different scales.

Original diagram drawn by Simple Learning Hub, based on NCERT Fig 14.16 (c). Report a mistake